EGF1D(1998) Ver la hoja de datos (PDF) - Fairchild Semiconductor
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fabricante
EGF1D Datasheet PDF : 4 Pages
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EGF1A - EGF1D
Features
• Low forward voltage drop.
• Low profile package.
• Fast switching for high efficiency.
0.062 (1.575)
0.055 (1.397)
2
0.181 (4.597)
0.157 (3.988)
0.114 (2.896)
1 0.098 (2.489)
3.93
3.73
1.67
1.47
+
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
0.208 (5.283)
0.188 (4.775)
2.38
2.18
5.49
5.29
Minimum Recommended
Land Pattern
0.060 (1.524) 0.008 (0.203)
0.030 (0.762) 0.002 (0.051)
1.0 Ampere High Efficiency Glass Passivated Rectifier
0.096 (2.438)
0.078 (1.981)
0.012 (0.305)
0.006 (0.152)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
IO
if(surge)
PD
RθJA
RθJC
Tstg
TJ
Average Rectified Current
@ TL = 100°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient **
Thermal Resistance, Junction to Case **
Storage Temperature Range
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Value
1.0
30
2.0
13
85
30
-65 to +175
-65 to +175
Units
A
A
W
mW /°C
°C/W
°C/W
°C
°C
Electrical Characteristics
Parameter
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 125°C
Maximum Forward Voltage @ 1.0 A
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
TA = 25°C unless otherwise noted
Device
1A
1B
1C
50
100
150
35
70
105
50
100
150
10
100
1.0
50
15
Units
1D
200
V
140
V
200
V
µA
µA
V
ns
pF
1998 Fairchild Semiconductor Corporation
EGF1A-EGF1D, Rev. B
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