AP2303GN Ver la hoja de datos (PDF) - Advanced Power Electronics Corp
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AP2303GN Datasheet PDF : 4 Pages
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Advanced Power
Electronics Corp.
AP2303GN
Pb Free Plating Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline
D
▼ Surface Mount Device
Description
S
SOT-23 G
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
-30V
240mΩ
- 1.9A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
- 30
± 20
-1.9
-1.5
-10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
90
Unit
℃/W
Data and specifications subject to change without notice
200407042
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