AOD424 Ver la hoja de datos (PDF) - Unspecified

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AOD424

20V N-Channel MOSFET

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AOD424

20V N-Channel MOSFET

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

20

V

IDSS

Zero Gate Voltage Drain Current

VDS=20V, VGS=0V

TJ=55°C

1

µA

5

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±12V

100 nA

VGS(th) Gate Threshold Voltage

VDS=VGS ID=250µA

0.5

1

1.6

V

ID(ON)

On state drain current

VGS=10V, VDS=5V

160

A

RDS(ON) Static Drain-Source On-Resistance

VGS=4.5V, ID=20A

TJ=125°C

3.6 4.4

mΩ

5.1 6.2

VGS=2.5V, ID=20A

4.5 5.7 mΩ

gFS

Forward Transconductance

VDS=5V, ID=20A

105

S

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous CurrentG

0.7

1

V

45

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

3080 3860 4630 pF

520 740 960 pF

350 580 810 pF

0.6 1.4 2.1

Ω

SWITCHING PARAMETERS

Qg(4.5V) Total Gate Charge

28

36

43

nC

Qgs

Gate Source Charge

VGS=10V, VDS=10V, ID=20A

9

nC

Qgd

Gate Drain Charge

12

nC

tD(on)

Turn-On DelayTime

7

ns

tr

Turn-On Rise Time

VGS=10V, VDS=10V, RL=0.5Ω,

8

ns

tD(off)

Turn-Off DelayTime

RGEN=3Ω

70

ns

tf

Turn-Off Fall Time

18

ns

trr

Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs

13

17

20

ns

Qrr

Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs

29

36

43

nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep

initial TJ =25°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

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