AOB420 Ver la hoja de datos (PDF) - Unspecified
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AOB420 Datasheet PDF : 8 Pages
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AOB420, AOB420L
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOB420 uses advanced trench technology to provide excellent RDS(ON) , low gate chargeand low
gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.
AOB420L (Green Product) is offered in a Lead Free package.
Features
VDS (V) = 30V
ID = 110A
RDS(ON) < 6.5mΩ (VGS = 10V)
RDS(ON) < 10.0mΩ (VGS = 4.5V)
TO-263
D2-PAK
Top View
Drain Connected
to Tab
GD S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C G
Current B,G
TC=100°C B
ID
Pulsed Drain Current
IDM
Avalanche Current C
IAR
Repetitive avalanche energy L=0.1mH C
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
110
65
200
30
120
100
50
3.1
2
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
8.1
33
12
40
Maximum Junction-to-Lead C
Steady-State
RθJL
1
1.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/8
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