AO8807L Ver la hoja de datos (PDF) - Unspecified
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AO8807L Datasheet PDF : 5 Pages
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AO8807
Dual P-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=-250µA, VGS=0V
VDS=-12V, VGS=0V
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-6.5A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-6A
VGS=-1.8V, ID=-5.5A
VGS=-1.5V, ID=-5A
Forward Transconductance
VDS=-5V, ID=-6.5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
-12
TJ=55°C
-0.35
-60
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-6V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On Delay Time
tr
Turn-On Rise Time
tD(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge
VGS=-4.5V, VDS=-6V, ID=-6.5A
VGS=-4.5V, VDS=-6V, RL=0.9Ω,
RGEN=3Ω
IF=-6.5A, dI/dt=100A/µs
IF=-6.5A, dI/dt=100A/µs
Typ
-0.53
16
23
19
23
28
45
-0.56
1740
334
200
1.3
19
4.5
5.3
240
580
7
4.2
22
17
Max
-1
-5
±10
-0.85
20
28
24
30
36
-1
-1.4
2100
1.7
23
27
Units
V
µA
µA
A
mΩ
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
kΩ
nC
nC
nC
ns
ns
µs
µs
ns
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
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