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AO4427

30V P-Channel MOSFET

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AO4427

30V P-Channel MOSFET

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

VGS(th)

ID(ON)

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

ID=-250µA, VGS=0V

-30

V

VDS=-30V, VGS=0V

TJ=55°C

-1

µA

-5

VDS=0V, VGS=±25V

±10 µA

VDS=VGS ID=-250µA

-1.7 -2.5 -3

V

VGS=-10V, VDS=-5V

-60

A

RDS(ON)

gFS

VSD

IS

VGS=-20V, ID=-12.5A

Static Drain-Source On-Resistance

VGS=-10V, ID=-10A

VGS=-4.5V, ID=-5A

Forward Transconductance

VDS=-5V, ID=-12.5A

Diode Forward Voltage

IS=-1A,VGS=0V

Maximum Body-Diode Continuous Current

TJ=125°C

9.4

12

mΩ

12.2 15

11.5 14 mΩ

32

mΩ

24

S

-1

V

-4.2 A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

2330 2900 pF

480

pF

320 448 pF

3.4 6.8 10

Ω

SWITCHING PARAMETERS

Qg

Qgs

Qgd

tD(on)

tr

tD(off)

tf

trr

Qrr

Total Gate Charge

Gate Source Charge

Gate Drain Charge

VGS=-10V, VDS=-15V,

ID=-12.5A

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=-10V, VDS=-15V, RL=1.2Ω,

RGEN=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time IF=-12.5A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=-12.5A, dI/dt=100A/µs

41

52

nC

10

nC

12

nC

12.8

ns

10.3

ns

49.5

ns

29

ns

28

35

ns

20

nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with

T A=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

SOA curve provides a single pulse rating.

F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Rev8: Nov. 2010

2/4

www.freescale.net.cn

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