AO4423(2012) Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor
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AO4423 Datasheet PDF : 4 Pages
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AO4423
30V P-Channel MOSFET
General Description
The AO4423 uses advanced trench technology to provide
excellent RDS(ON), and ultra-low low gate charge with a
25V gate rating. This device is suitable for use as a load
switch or in PWM applications.
Product Summary
VDS (V) = -30V
ID = -17A
RDS(ON) < 6.2mΩ
RDS(ON) < 7.2mΩ
(VGS = -20V)
(VGS = -20V)
(VGS = -10V)
ESD Protected
100% UIS tested
100% Rg tested (note *)
Top View
D
D
D
D
SOIC-8
Bottom View
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current AF
TA=70°C
ID
Pulsed Drain Current B
IDM
Power Dissipation A
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
G
Maximum
-30
±25
-17
-14
-182
3.1
2
-55 to 150
Typ
26
50
14
D
S
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd,com
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