DSF8025SE24(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

fabricante

DSF8025SE24
(Rev.:2000)

Fast Recovery Diode

Dynex Semiconductor 

DSF8025SE

4/8

500

Measured under pulse conditions

400

300

Tj = 150˚C

200

Tj = 25˚C

100

0

1.00

1.25

1.50

1.75

2.00

Instantaneous forward voltage VF - (V)

Fig. 2 Maximum (limit) forward characteristics

250

VFR

200

δy

150

δx

Current

waveform

Voltage

waveform

di = δy

dt δx

Tj = 125˚C limit

100

Tj = 25˚C limit

50

0

0

500

1000

1500

2000

Rate of rise of forward current dIF/dt - (A/µs)

Fig. 3 Transient forward voltage vs rate of rise of forward current

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