74LV20 Ver la hoja de datos (PDF) - Philips Electronics
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74LV20 Datasheet PDF : 12 Pages
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Philips Semiconductors
Dual 4-input NAND gate
Product specification
74LV20
DC CHARACTERISTICS
Over recommended operating conditions voltages are referenced to GND (ground = 0V)
LIMITS
SYMBOL PARAMETER
TEST CONDITIONS
-40°C to +85°C
MIN
TYP1 MAX
VCC = 1.2V
0.9
VIH
HIGH level Input
voltage
VCC = 2.0V
1.4
VCC = 2.7 to 3.6V
2.0
VCC = 1.2V
0.3
VIL
LOW level Input
voltage
VCC = 2.0V
0.6
VCC = 2.7 to 3.6V
0.8
VCC = 1.2V; VI = VIH or VIL; –IO = 100µA
1.2
VOH
HIGH level output VCC = 2.0V; VI = VIH or VIL; –IO = 100µA
voltage; all outputs VCC = 2.7V; VI = VIH or VIL; –IO = 100µA
1.8
2.5
2.0
2.7
VCC = 3.0V; VI = VIH or VIL; –IO = 100µA
2.8
3.0
HIGH level output
VOH
voltage;
STANDARD
VCC = 3.0V; VI = VIH or VIL; –IO = 6mA
outputs
2.40
2.82
VCC = 1.2V; VI = VIH or VIL; IO = 100µA
VOL
LOW level output VCC = 2.0V; VI = VIH or VIL; IO = 100µA
voltage; all outputs VCC = 2.7V; VI = VIH or VIL; IO = 100µA
VCC = 3.0V;VI = VIH or VIL; IO = 100µA
LOW level output
VOL
voltage;
STANDARD
VCC = 3.0V;VI = VIH or VIL; IO = 6mA
outputs
0
0
0.2
0
0.2
0
0.2
0.25
0.40
II
Input leakage
current
VCC = 3.6V; VI = VCC or GND
1.0
ICC
Quiescent supply
current; SSI
VCC = 3.6V; VI = VCC or GND; IO = 0
20.0
Additional
∆ICC quiescent supply VCC = 2.7V to 3.6V; VI = VCC –0.6V
500
current per input
NOTE:
1 All typical values are measured at Tamb = 25°C.
-40°C to +125°C
MIN
MAX
0.9
1.4
2.0
0.3
0.6
0.8
1.8
2.5
2.8
2.20
0.2
0.2
0.2
0.50
1.0
40
850
UNIT
V
V
V
V
V
V
µA
µA
µA
AC CHARACTERISTICS
GND = 0V; tr = tf ≤ 2.5ns; CL = 50pF; RL = 1KΩ
SYMBOL
PARAMETER
WAVEFORM
CONDITION
VCC(V)
1.2
tPHL/tPLH
Propagation delay
nA, nB, nC, nD to nY
Figures 1, 2
2.0
2.7
3.0 to 3.6
NOTE:
1 Unless otherwise stated, all typical values are at Tamb = 25°C.
2 Typical value measured at VCC = 3.3V.
LIMITS
–40 to +85 °C
MIN TYP1 MAX
–
50
–
–
17
32
–
13
24
–
102
19
LIMITS
–40 to +125 °C
MIN MAX
–
–
–
39
–
29
–
23
UNIT
ns
1998 Apr 20
5
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