Philips Semiconductors
Quad 2-input NAND gate
Product specification
74ALVC00
FEATURES
• Wide supply voltage range from 1.65 to 3.6 V
• 3.6 V tolerant inputs/outputs
• CMOS low power consumption
• Direct interface with TTL levels (2.7 to 3.6 V)
• Power-down mode
• Latch-up performance exceeds 250 mA
• Complies with JEDEC standard:
JESD8-7 (1.65 to 1.95 V)
JESD8-5 (2.3 to 2.7 V)
JESD8B/JESD36 (2.7 to 3.6 V).
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
DESCRIPTION
The 74ALVC00 is a high-performance, low-power,
low-voltage, Si-gate CMOS device and superior to most
advanced CMOS compatible TTL families.
Schmitt-trigger action at all inputs makes the circuit
tolerant for slower input rise and fall times.
The 74ALVC00 provides the 2-input NAND function.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C.
SYMBOL
tPHL/tPLH
CI
CPD
PARAMETER
CONDITIONS
propagation delay inputs
nA, nB to output nY
input capacitance
VCC = 1.8 V; CL = 30 pF; RL = 1 kΩ
VCC = 2.5 V; CL = 30 pF; RL = 500 Ω
VCC = 2.7 V; CL = 50 pF; RL = 500 Ω
VCC = 3.3 V; CL = 50 pF; RL = 500 Ω
power dissipation capacitance per buffer VCC = 3.3 V; notes 1 and 2
TYPICAL UNIT
2.8
ns
2.1
ns
2.6
ns
2.1
ns
3.5
pF
28
pF
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. The condition is VI = GND to VCC.
2003 May 14
2