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74AHC2G Datasheet PDF : 16 Pages
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Philips Semiconductors
74AHC2G32; 74AHCT2G32
Dual 2-input OR gate
12. Dynamic characteristics
Table 10: Dynamic characteristics type 74AHC2G32
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); tr = tf ≤ 3.0 ns; see Figure 6.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 25 °C
tPHL, tPLH propagation delay see Figure 5
nA and nB to nY
VCC = 3.0 V to 3.6 V; CL = 15 pF
[1] -
4.4
7.9
ns
VCC = 4.5 V to 5.5 V; CL = 15 pF
[2] -
3.2
5.5
ns
VCC = 3.0 V to 3.6 V; CL = 50 pF
-
6.3
11.4
ns
VCC = 4.5 V to 5.5 V; CL = 50 pF
-
4.6
7.5
ns
CPD
power dissipation CL = 50 pF; fi = 1 MHz
capacitance
[3] [4] -
16
-
pF
Tamb = −40 °C to +85 °C
tPHL, tPLH propagation delay
nA and nB to nY
see Figure 5
VCC = 3.0 V to 3.6 V; CL = 15 pF
1.0
-
9.5
ns
VCC = 4.5 V to 5.5 V; CL = 15 pF
1.0
-
6.5
ns
VCC = 3.0 V to 3.6 V; CL = 50 pF
1.0
-
13.0
ns
VCC = 4.5 V to 5.5 V; CL = 50 pF
1.0
-
8.5
ns
Tamb = −40 °C to +125 °C
tPHL, tPLH propagation delay
nA and nB to nY
see Figure 5
VCC = 3.0 V to 3.6 V; CL = 15 pF
1.0
-
10.0
ns
VCC = 4.5 V to 5.5 V; CL = 15 pF
1.0
-
7.0
ns
VCC = 3.0 V to 3.6 V; CL = 50 pF
1.0
-
14.5
ns
VCC = 4.5 V to 5.5 V; CL = 50 pF
1.0
-
9.5
ns
[1] Typical values are measured at VCC = 3.3 V.
[2] Typical values are measured at VCC = 5.0 V.
[3] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
[4] The condition is VI = GND to VCC.
9397 750 12532
Product data sheet
Rev. 01 — 23 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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