5SMX 12L2511
162
135
25 °C
108
125 °C
81
162
VCE = 20 V
135
108
81
54
27
VGE = 15 V
0
0
1
2
3
4
5
6
7
VCE [V]
54
125 °C
27
25 °C
0
0 2 4 6 8 10 12 14 16
VGE [V]
Fig. 1 Typical on-state characteristics
Fig. 2 Typical transfer characteristics
300
VCC = 1250 V
RG = 33 ohm
250 VGE = ±15 V
Tvj = 125 °C
Lσ = 2.4 µH
200
150
Eon
Eoff
120
100
Eoff
80
60
100
50
0
0
Esw [mJ] = 0.94 x 10-2 x IC2 + 1.36 x IC + 9.77
27
54
81 108 135 162
IC [A]
40
Eon
20
0
VCC = 1250 V
IC = 54 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 2.4 µH
0 20 40 60 80 100 120 140
RG [ohm]
Fig. 3 Typical switching characteristics vs
collector current
Fig. 4 Typical switching characteristics vs
gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1640-00 Mar 07
page 4 of 5