30BQ015-9AT Ver la hoja de datos (PDF) - Vishay Semiconductors
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30BQ015-9AT Datasheet PDF : 6 Pages
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VS-30BQ015-M3
Vishay Semiconductors
Schottky Rectifier, 3.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum reverse leakage current
IRM
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
TEST CONDITIONS
3A
TJ = 25 °C
6A
3A
TJ = 75 °C
6A
TJ = 25 °C
TJ = 100 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.35
0.43
0.30
0.38
4
50
1120
3.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ (1)
Maximum storage temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
TStg
RthJL (2)
RthJA
DC operation
Approximate weight
Marking device
Case style SMC (similar to DO-214AB)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB
VALUES
- 55 to 125
- 55 to 150
UNITS
°C
12
°C/W
46
0.24
g
0.008
oz.
3C
www.vishay.com
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For technical questions within your region, please contact one of the following: Document Number: 93359
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 06-Sep-10
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