2SK3403(2002) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
fabricante
| 2SK3403 Datasheet PDF : 0 Pages | |||
2SK3403
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
VGS = ±25 V, VDS = 0 V
IG = 10 mA, VDS = 0 V
VDS = 450 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
ïYfsï
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 6 A
VDS = 10 V, ID = 6 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
¾
¾
±10
mA
±30
¾
¾
V
¾
¾
100
mA
450
¾
¾
V
550
3.0
¾
5.0
V
¾ 0.29 0.4
W
3.0
5.8
¾
S
¾ 1600 ¾
¾
17
¾
pF
¾ 220 ¾
tr
VG1S0 V
0V
ton
tf
ID = 6 A
¾
28
¾
Output
¾
45
¾
RL =
ns
33.3 W
¾
10
¾
VDD ~- 200 V
toff
Duty <= 1%, tw = 10 ms
¾
56
¾
Qg
Qgs
VDD ~- 360 V, VGS = 10 V, ID = 13 A
Qgd
¾
34
¾
¾
19
¾
nC
¾
15
¾
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
¾
¾
IDR = 13 A, VGS = 0 V
IDR = 13 A, VGS = 0 V,
dIDR/dt = 100 A/ms
Min Typ. Max Unit
¾
¾
13
A
¾
¾
52
A
¾
¾
-1.7
V
¾
300
¾
ns
¾
3.4
¾
mC
Marking
K3403
※
Type
※ Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2
2002-09-02
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