2SK1934 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

fabricante

2SK1934

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1934

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Drain to source breakdown

voltage

V(BR)DSS

1000 —

Gate to source breakdown

voltage

V(BR)GSS

±30

—

Gate to source leak current IGSS

—

—

Zero gate voltage drain current IDSS

—

—

Gate to source cutoff voltage VGS(off)

2.0

—

Static drain to source on state RDS(on)

—

1.2

resistance

Forward transfer admittance |yfs|

4

6

Max

—

—

±10

250

3.0

1.6

—

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note 1. Pulse Test

2690 —

920 —

375 —

35

—

135 —

300 —

205 —

0.9

—

1600 —

Unit

V

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

µs

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 800 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 4 A

VGS = 10 V*1

ID = 4 A

VDS = 20 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 4 A

VGS = 10 V

RL = 7.5 Ω

IF = 8 A, VGS = 0

IF = 8 A, VGS = 0,

diF / dt = 100 A / µs

3

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