2SK1584 Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
componentes Descripción
fabricante
2SK1584 Datasheet PDF : 8 Pages
| |||
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1584
N-CHANNEL MOS FET
FOR SWITCHING
DESCRIPTION
The 2SK1584 is a switching device which can be driven directly
by a 5-V power source.
The 2SK1584 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
actuator driver.
FEATURES
• Can be driven by a 5-V power source.
• Low On-state resistance :
RDS(on)1 = 2.0 Ω MAX. (VGS = 4 V, ID = 0.3 A)
RDS(on)2 = 1.5 Ω MAX. (VGS = 10 V, ID = 0.3 A)
PACKAGE DRAWING (Unit : mm)
4.5±0.1
1.6±0.2
1 23
Electrode
Connection
1.5±0.1
1.Source
2.Drain
3.Gate
0.42
0.42±0.06
±0.06
1.5
0.47
±0.06
3.0
0.41+0.03
-0.05
Marking : NH
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±500 mA
Drain Current (pulse) Note1
ID(pulse)
±1.0
A
Total Power Dissipation (TA = 25°C)Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg −55 to +150 °C
Notes1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on ceramic board of 16 cm2 × 0.7 mm
EQUIVALENT CIRCUIT
Drain
Gate
Internal
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15283EJ2V0DS00 (2nd edition)
The mark 5 shows major revised points.
©
Date Published February 2001 NS CP (K)
Printed in Japan
1991,2001
Share Link: 