2SJ599 Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza

componentes Descripción

fabricante

2SJ599

SWITCHING P-CHANNEL POWER MOS FET

NEC => Renesas Technology 

PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3)

6.5 ±0.2

5.0 ±0.2

4

123

1.1 ±0.2

2.3 ±0.2

0.5 ±0.1

2.3 2.3

0.5

+0.2

−0.1

0.5

+0.2

−0.1

1. Gate

2. Drain

3. Source

4. Fin (Drain)

2SJ599

2) TO-252 (MP-3Z)

6.5 ±0.2

5.0 ±0.2

4

2.3 ±0.2

0.5 ±0.1

123

1.1 ±0.2

2.3 2.3

0.9 0.8

MAX. MAX.

0.8

1. Gate

2. Drain

3. Source

4. Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Data Sheet D14644EJ3V0DS

7

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