2SJ280S Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
fabricante
2SJ280S Datasheet PDF : 8 Pages
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2SJ280 L , 2SJ280 S
Silicon P Channel MOS FET
Application
High speed power switching
LDPAK
Features
• Low on–resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from
5 V source
1
• Suitable for Switching regulator, DC – DC
converter
• Avalanche Ratings
4
1
2
2, 4
3
3
4
12
3
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
–60
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±20
V
———————————————————————————————————————————
Drain current
ID
–30
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
–120
A
———————————————————————————————————————————
Body–drain diode reverse drain current
IDR
–30
A
———————————————————————————————————————————
Avalanche current
IAP***
–30
A
———————————————————————————————————————————
Avalanche energy
EAR***
77
mJ
———————————————————————————————————————————
Channel dissipation
Pch**
75
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
*** Value at Tch = 25 °C, Rg ≥ 50 Ω
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