2SD973 Ver la hoja de datos (PDF) - Panasonic Corporation
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2SD973 Datasheet PDF : 4 Pages
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Transistor
2SD0973, 2SD0973A (2SD973, 2SD973A)
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
I Features
G Low collector to emitter saturation voltage VCE(sat).
G M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
1.5
1.5 R0.9
R0.9
R0.7
2.5±0.1
1.0
I Absolute Maximum Ratings (Ta=25˚C)
0.85
Parameter
Symbol
Ratings
Unit
Collector to 2SD0973
30
VCBO
V
base voltage 2SD0973A
60
Collector to 2SD0973
25
VCEO
V
emitter voltage 2SD0973A
50
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5
A
Collector current
IC
1
A
Collector power dissipation PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
I Electrical Characteristics (Ta=25˚C)
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base 2SD0973
voltage
2SD0973A
ICBO
VCBO
VCB = 20V, IE = 0
IC = 10µA, IE = 0
0.1
µA
30
V
60
Collector to emitter 2SD0973
25
VCEO
IC = 2mA, IB = 0
V
voltage
2SD0973A
50
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
*1hFE1 Rank classification
IE = 10µA, IC = 0
5
V
VCE = 10V, IC = 500mA*2
85
160 340
VCE = 5V, IC = 1A*2
50
100
IC = 500mA, IB = 50mA*2
0.2
0.4
V
IC = 500mA, IB = 50mA*2
0.85 1.2
V
VCB = 10V, IE = –50mA, f = 200MHz
200
MHz
VCB = 10V, IE = 0. f = 1MHz
11
20
pF
*2 Pulse measurement
Rank
hFE1
Q
85 ~ 170
R
S
120 ~ 240 170 ~ 340
Note.) The Part numbers in the Parenthesis show conventional
part number.
1
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