2SD837 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SD837

iscSilicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD837

DESCRIPTION

·High DC Current Gain-

: hFE= 1000(Min.)@IC= 3A

·High Switching Speed

APPLICATIONS

·Audio power amplifiers

·General purpose power amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

4

A

ICM

Base Current-Peak

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

8

A

40

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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