2SD628 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SD628

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD628

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 10mA

V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 100mA

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= 5A; IB=B 10mA

VBE(sat)-2 Base-Emitter Saturation Voltage

IC= 10A; IB= 100mA

ICBO

Collector Cutoff Current

VCB= 100V; IE= 0

ICEO

Collector Cutoff Current

VCE= 80V; RBE= ∞

hFE

DC Current Gain

IC= 5A, VCE= 3V

Switching Times

ton

Turn-on Time

toff

Fall Time

IC= 5A, IB1= -IB2= 10mA

MIN TYP. MAX UNIT

100

V

7

V

2.0

V

3.0

V

2.0

V

3.5

V

0.1 mA

1.0 μA

1000

20000

2

μs

8

μs

isc Website：www.iscsemi.cn

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