2SD2023 Ver la hoja de datos (PDF) - SavantIC Semiconductor

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fabricante

2SD2023

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD2023

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=50µA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=50µA; IC=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A

VBEsat

Base-emitter saturation voltage

IC=2A; IB=0.2A

ICBO

Collector cut-off current

VCB=60V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

COB

Collector output capacitance

fT

Transition frequency

IC=1A ; VCE=5V

IE=0 ; VCB=10V;f=1MHz

IC=0.5A ; VCE=5V

MIN TYP. MAX UNIT

60

V

80

V

6

V

1.0

V

1.5

V

10

µA

10

µA

60

320

70

pF

8

MHz

hFE Classifications

D

E

F

60-120 100-200 160-320

2

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