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2SD1747 Ver la hoja de datos (PDF) - Panasonic Corporation

Número de pieza
componentes Descripción
fabricante
2SD1747
Panasonic
Panasonic Corporation 
2SD1747 Datasheet PDF : 4 Pages
1 2 3 4
Power Transistors
2SD1747, 2SD1747A
Silicon NPN epitaxial planar type
For power switching
Features
Low collector-emitter saturation voltage VCE(sat)
Satisfactory liniarity of forward current transfer ratio hFE
Large collector current IC
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SD1747 VCBO
130
V
(Emitter open)
2SD1747A
150
Collector-emitter voltage 2SD1747 VCEO
80
V
(Base open)
2SD1747A
100
Emitter-base voltage (Collector open) VEBO
7
V
Collector current
IC
7
A
Peak collector current
ICP
15
A
Collector power dissipation
PC
15
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg 55 to +150 °C
7.0±0.3
3.0±0.2
2.0±0.2
Unit: mm
3.5±0.2
0˚ to 0.15˚
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SD1747 VCEO IC = 10 mA, IB = 0
80
V
(Base open)
2SD1747A
100
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
hFE1
hFE2 *
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
VCE = 2 V, IC = 0.1 A
VCE = 2 V, IC = 3 A
IC = 5 A, IB = 0.25 A
IC = 5 A, IB = 0.25 A
VCE = 10 V, IC = 0.5 A, f = 10 MHz
IC = 3 A, IB1 = 0.3 A, IB2 = − 0.3 A
VCC = 50 V
10
µA
50
µA
45
90
260
0.5
V
1.5
V
30
MHz
0.5
µs
1.5
µs
0.2
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
90 to 180 130 to 260
Publication date: March 2003
SJD00219BED
1

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