2SD1413 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2SD1413 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1413
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SB1023
·DARLINGTON
APPLICATIONS
·Power amplifier and switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
60
40
5
3
0.5
20
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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