2SD1412 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SD1412

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1412

DESCRIPTION

·Low Collector Saturation Voltage

: VCE(sat)= 0.4V(Max)@ IC= 4A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 50V (Min)

·Complement to Type 2SB1019

APPLICATIONS

·High current switching applications.

·Power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

70

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

7

A

IBB

Base Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

1

A

2

W

30

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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