2SD1419 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

fabricante

2SD1419

Silicon NPN Epitaxial

Renesas Electronics 

2SD1419

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

120

—

—

V IC = 10 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO 100

—

—

V IC = 1 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

5

—

—

V IE = 10 µA, IC = 0

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation voltage

Base to emitter voltage

Gain bandwidth product

ICBO

—

—

10

µA VCB = 100 V, IE = 0

hFE1

100

—

200

VCE = 5 V, IC = 150 mA*1

hFE2

30

—

—

VCE = 5 V, IC = 500 mA*1

VCE(sat)

—

—

1

V IC = 500 mA, IB = 50 mA*1

VBE

—

—

1.5

V VCE = 5 V, IC = 150 mA*1

fT

—

140

—

MHz VCE = 5 V, IC = 150 mA*1

Collector output capacitance

Cob

—

12

—

pF VCB = 10 V, IE = 0, f = 1 MHz

Notes: 1. Pulse test

Rev.2.00 Aug 10, 2005 page 2 of 5

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