2SC5280 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SC5280

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=6A;IB=1.5 A

VBEsat Base-emitter saturation voltage

IC=6A;IB=1.5 A

V(BR)EBO Emitter-base breakdown voltage

IE=400mA;IC=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

ICBO

Collector cut-off current

VCB=1500V; IE=0

hFE-1

DC current gain

IC=1 A ; VCE=5V

hFE-2

DC current gain

IC=6A ; VCE=5V

fT

Transition frequency

IE=0.1A ; VCE=10V

COB

Collector output capacitance

IE=0 ; VCB=10V;f=1MHz

VF

Diode forward voltage

IF=6A

Switching times

tstg

Storage time

tf

Fall time

ICP=6A;IB1(end)=1.2A

fH=31.5kHz

Product Specification

2SC5280

MIN TYP. MAX UNIT

5

V

1.0 1.5

V

5

V

72

250 mA

1

mA

10

35

4

8.5

2

MHz

115

pF

1.4 1.8

V

4

6

μs

0.2

0.5

μs

2

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