2SC5288 Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza

componentes Descripción

fabricante

2SC5288

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

NEC => Renesas Technology 

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

Parameter

Symbol

Condition

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Output Power

Power Gain

Collector Efficiency

ICBO

VCB = 5 V, IE = 0

IEBO

VEB = 1 V, IC = 0

hFE

VCE = 3.6 V, IC = 100 mANote

P–1

VCC = 3.6 V, f = 1.9 GHz,

GP

ICq = 1 mA (class AB operation)

ηC

Duty factor 1/8

Note Pulse Measurement: PW ≤ 350 µs, Duty cycle ≤ 2 %, Pulsed

hFE Classification

Rank

Marking

hFE

FB

T89

more than 60

APPLICATION EXAMPLES

(1) Power amplifier for DECT

2SC5288

MIN.

60

23

7

50

TYP.

24

8

60

MAX.

2.5

2.5

Unit

µA

µA

—

dBm

dB

%

+3 dBm

2SC5192

(2) Power amplifier for PHS

2SC5288

2SC5289

PO = 27 dBm

+7 dBm

2SC5288

2SC5289

PL = 23 dBm

2

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