2SC4793 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SC4793

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=0.5A IB=50mA

VBE

Base-emitter voltage

IC=0.5A ; VCE=5V

ICBO

Collector cut-off current

VCB=230V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=0.1A ; VCE=5V

COB

Output capacitance

IE=0; VCB=10V;f=1MHz

fT

Transition frequency

IC=0.1A ; VCE=10V

Product Specification

2SC4793

MIN TYP. MAX UNIT

230

V

1.5

V

1.0

V

1.0 μA

1.0 μA

100

320

20

pF

100

MHz

2

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