2SC4789 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
fabricante
2SC4789 Datasheet PDF : 4 Pages
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2SC4789
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ Max Unit Test Conditions
———————————————————————————————————————————
Collector to emitter breakdown V(BR)CEO
800
—
—
V IC = 10 mA,
voltage
RBE = ∞
———————————————————————————————————————————
Emitter to base breakdown
voltage
V(BR)EBO
6
—
—
V IE = 10 mA, IC = 0
———————————————————————————————————————————
Collector cutoff current
ICES
—
—
500 µA VCE = 1500 V,
RBE = 0
———————————————————————————————————————————
DC current transfer ratio
hFE
10
—
33
— VCE = 5 V,
IC = 1 A
———————————————————————————————————————————
Collector to emitter saturation VCE(sat)
—
—
5
V IC = 16 A, IB = 4 A
voltage
———————————————————————————————————————————
Base to emitter saturation
voltage
VBE(sat)
—
—
1.5
V IC = 16 A, IB = 4 A
———————————————————————————————————————————
Fall time
tf
—
—
0.5
µs ICP = 10 A, IB1 = 2 A
IB2 = –3 A,
fH = 31.5 kHz
———————————————————————————————————————————
Maximum Collector Power Dissipation Curve
200
150
100
50
0
50
100
150
200
Case Temperature Tc (°C)
Area of Safe Operation
40
30 (100 V, 30 A)
20
10
(800 V, 4 A)
0.5 mA
0
500 1000 1500 2000
Collector to Emitter Voltage VCE (V)
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