INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4236
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V(Min)
·Fast Switching speed
APPLICATIONS
·Color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
VEBO
IC
ICM
www.iscsemi.cn Collector-Emitter Voltage
800
V
Emitter-Base Voltage
7
V
Collector Current-Continuous
6
A
Collector Current-Peak
12
A
IBB
Base Current-Continuous
3
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
6
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W
isc Website:www.iscsemi.cn