2SC3851 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2SC3851 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3851 2SC3851A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2SC3851
60
V(BR)CEO
Collector-emitter
breakdown voltage
IC=25mA ; IB=0
V
2SC3851A
80
VCEsat Collector-emitter saturation voltage IC=2.0A;IB=0.2A
0.5
V
ICBO
Collector cut-off
current
2SC3851 VCB=80V;IE=0
2SC3851A VCB=100V;IE=0
0.1
mA
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=4V
40
320
fT
Transition frequency
IC=0.2A ; VCE=12V
15
MHz
COB
Output capacitance
固IN电C半H导AN体GE SEMICONDUCTOR Switching time
ton
Turn-on time
ts
Storage time
tf
Fall time
IE=0 ; VCB=10V;f=1MHz
IC=2.0A IB1=-IB2=0.2A
VCC=12V ,RL=6Ω
60
pF
0.20
μs
1.00
μs
0.30
μs
2
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