2SC3934 Ver la hoja de datos (PDF) - Panasonic Corporation
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2SC3934 Datasheet PDF : 4 Pages
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Transistors
2SC3934
Silicon NPN epitaxial planar type
For high-frequency wide-band low-noise amplification
■ Features
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
15
V
Collector-emitter voltage (Base open) VCEO
12
V
Emitter-base voltage (Collector open) VEBO
2.5
V
Collector current
IC
30
mA
Peak collector current
ICP
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 1U
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
100 nA
Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 0
1
µA
Forward current transfer ratio
hFE VCE = 10 V, IC = 10 mA
40
Transition frequency
fT
VCE = 10 V, IC = 10 mA, f = 0.8 GHz
4.5
GHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
1.2
pF
Forward transfer gain
Maximum unilateral power gain
Noise figure
S21e2 VCE = 10 V, IC = 20 mA, f = 0.8 GHz
9
12
dB
GUM VCE = 10 V, IC = 20 mA, f = 0.8 GHz
12
14
dB
NF VCE = 10 V, IC = 5 mA, f = 0.8 GHz
1.3 2.5
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJC00144BED
1
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