2SC2712G-Y-AE3-R(2015) Ver la hoja de datos (PDF) - Unisonic Technologies
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2SC2712G-Y-AE3-R Datasheet PDF : 4 Pages
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2SC2712
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
3000
1000
500
300
fT - IC
Common Emitter
VCE=10V
TA=25°С
100
50
30
100.1 0.3 1 3 10 30 100 300
Collector Current, IC (mA)
2000
1000
500
300
100
3500
10
5
3
h Parameter, IC
Common Emitter
BL VCE=12V, f=270Hz, TA=25°С
GR
Y
hie×KΩ O BL
Y
BL
GR
GR
O
Y
O
hoe×µS
1
0.5
0.3
0.01.1
O
Y BL GR hre×10-4
0.3 1
3
10 30
Collector Current, IC (mA)
IB - VBE
3000 Common Emitter
1000 VCE=10V
500
300
100
50
30
10
5
3
1
0.5
0.30
TA=100°С
25°С
-25°С
0.2 0.4 0.6 0.8 1.0 1.2
Base-Emitter Voltage, VBE (V)
h Parameter, VCE
2000
1000
500
Common Emitter
IC=2mA, TA=25°С,
f=270Hz
300
BL
GR hre
100
Y
3500
O
O Y GR BL
10
5
3
GR
1Y
BL
hie×KΩ
hoe×µS
BL
GR
Y
0.5 O
0.3
hre×10-4
O
0.01.5 1
3
10 30 100 300
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R206-029.G
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