B707R Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

Número de pieza

componentes Descripción

fabricante

B707R

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SB707

2SB708

IC=-10mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5 A

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-5A;IB=-0.5 A

VCB=-60V; IE=0

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-3A ; VCE=-1V

hFE-2

DC current gain

IC=-5A ; VCE=-1V

‹ hFE-2 classifications

R

O

Y

40-80 60-120 100-200

Product Specification

2SB707 2SB708

MIN TYP. MAX UNIT

-60

V

-80

-0.5

V

-1.5

V

-10

μA

-10

μA

40

200

20

2

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