2SB705 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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fabricante

2SB705

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SB705/705A/705B

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SB705

2SB705A IC=-25mA; IB=0

2SB705B

VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5 A

VBEsat Base-emitter saturation voltage

IC=-5A;IB=-0.5 A

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

hFE-2

DC current gain

VCB=-140V; IE=0

VEB=-3V; IC=0

IC=-50mA ; VCE=-5V

IC=-2A ; VCE=-5V

fT

Transition frequency

IC=-0.2A ; VCE=-5V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

MIN TYP. MAX UNIT

-140

-150

V

-160

-1.5

V

-2.0

V

-50 μA

-50 μA

20

40

200

17

MHz

430

pF

‹ hFE-2 classifications

S

R

Q

40-80 60-120 100-200

2

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