2SB554 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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2SB554

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A

VBE

Base-emitter on voltage

IC=-2A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-90V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-2A ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1.0MHz

fT

Transition frequency

IC=-2A ; VCE=-5V

Product Specification

2SB554

MIN TYP. MAX UNIT

-180

V

-3.0

V

-1.5

V

-0.1 mA

-0.1 mA

40

140

450

pF

6

MHz

2

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