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B1149

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

DESCRIPTION

·With TO-126 package

·DARLINGTON

·High DC current gain

·Low collector saturation voltage

APPLICATIONS

·For use in operating from IC without

predriver ,such as hammer driver

PINNING(See Fig.2)

PIN

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VCBO

Collector-base voltage

Open emitter

VCEO

Collector-emitter voltage

Open base

VEBO

Emitter-base voltage

Open collector

IC

Collector current (DC)

ICM

Collector current-peak

PD

Total power dissipation

Ta=25℃

TC=25℃

Tj

Junction temperature

Tstg

Storage temperature

Product Specification

2SB1149

VALUE

-100

-100

-8

-3.0

-5.0

1.3

15

150

-55~150

UNIT

V

V

V

A

A

W

℃

℃

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