2SA1309A Ver la hoja de datos (PDF) - Transys Electronics Limited

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2SA1309A

TO-92S Plastic-Encapsulated PNP Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

TO-92S Plastic-Encapsulated Transistors

2SA1309A TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM : 0.3 W (Tamb=25℃)

Collector current

ICM : -0.1 A

Collector-base voltage

V(BR)CBO : -60 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92S

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

VCE(sat)

fT

Cob

Test conditions

Ic=-10µA, IE=0

Ic=-2mA, IB=0

IE=-10µA, IC=0

VCB=-10V, IE=0

VEB=-10V, IC=0

VCE=-10V, IC=-2mA

IC=-50mA, IB=-5mA

VCE=-10V, IC=-1mA, f=200MHz

VCB=-10V, IE=0, f=1MHz

MIN TYP MAX UNIT

-60

V

-50

V

-7

V

-0.1 µA

-1

µA

160

460

-0.3 V

80

MHz

3.5

pF

CLASSIFICATION OF hFE(1)

Rank

Q

Range

160-260

Marking

R

210-340

S

290-460

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