2N7091
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Test Conditions
STATIC ELECTRICAL RATINGS
V(BR)DSS Drain–Source Breakdown Voltage VGS = 0
VGS(th)
Gate Threshold Voltage
VDS = VGS
IGSS
Gate – Body Leakage
VDS = 0
IDSS
Zero Gate Voltage Drain Current VDS = -80V
VGS = 0
ID(on)
On–State Drain Current1
VDS = -10V
rDS(on)
Drain – Source On–State
Resistance 1
VGS = -10V
ID = 8.7A
gfs
Forward Transconductance1
VDS = -15V
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS = 0
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1MHz
Qg
Total Gate Charge2
Qgs
Gate Source Charge2
Qgd
Gate Drain Charge2
VDS = -50
VGS = -10V
td(on)
Turn–On Delay Time2
VDD = -50V
tr
td(off)
tf
Rise Time2
Turn–Off Delay Time2
Fall Time2
VGEN =-10V
RL = 3.5W
RG = 4.7W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Current
ISM
Pulsed Current
VSD
Diode Forward Voltage1
IF = -14A
trr
Reverse Recovery Time
IF = -14A
Qrr
Reverse Recovery Charge
di/dt = 100A/µs
m 1 Pulse test : Pulse Width < 300 s ,Duty Cycle < 2%
2 Independent of Operating Temperature
ID = -250µA
ID = -250µA
VGS = ±20V
TJ = 125°C
VGS = -10V
TJ = 125°C
IDS = -8.7A
ID = -14A
ID = -14A
VGS = 0
Min. Typ. Max. Unit
-100
V
-2
-4
V
±100 nA
-25
µA
-250
-14
A
0.15
0.20
W
2.3
0.32
5.0
S
1300
750
310
50
10
27
10
50
40
40
pF
62
15
nC
35
30
80
ns
80
60
-14
A
-56
-2
V
150
300 ns
0.3
µC
THERMAL RESISTANCECHARACTERISTICS
RthJC
RthJA
RthCS
Parameter
Thermal resistance Junction-Case
Thermal resistance Junction-ambient
Thermal resistance Case to Sink
Min.
Typ.
1.0
Max. Unit
1.8
80 °C/W
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 2653
Issue 1