2N7000BU Ver la hoja de datos (PDF) - Fairchild Semiconductor

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2N7000BU

Advanced Small Signal MOSFET

Fairchild Semiconductor 

Advanced Small Signal MOSFET 2N7000BU/2N7000TA

FEATURES

n Fast Switching Times

n Improved Inductive Ruggedness

n Lower Input Capacitance

n Extended Safe Operating Area

n Improved High Temperature Reliability

BVDSS = 60 V

RDS(on) = 5.0 Ω

ID = 200 mA

TO-92

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

PD

TJ , TSTG

TL

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (TC=25℃)

Continuous Drain Current (TC=100℃)

Drain Current-Pulsed

①

Gate-to-Source Voltage

Total Power Dissipation (TC=25℃)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8? from case for 5-seconds

Thermal Resistance

Symbol

RθJA

Characteristic

Junction-to-Ambient

1.Source 2. Gate 3. Drain

Value

60

200

110

1000

±30

400

3.2

- 55 to +150

300

Units

V

mA

mA

V

mW

mW/℃

℃

Typ.

--

Max.

312.5

Units

℃/W

Rev. B

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