2N6477 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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fabricante

2N6477

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

2N6477

2N6478

IC=0.1A ;IB=0

VCEsat-1 Collector-emitter saturation voltage IC=1.0A;IB=0.1A

VCEsat-2 Collector-emitter saturation voltage IC=2.5A;IB=0.5A

VBE-1

Base-emitter on voltage

IC=1.0A ; VCE=4V

VBE-2

ICEX

ICEO

Base-emitter on voltage

IC=2.5A ; VCE=4V

Collector cut-off current

VBE=-1.5V

2N6477

2N6478

VCE=130V

VCE=120V; TC=150℃

VCE=150V

VCE=140V; TC=150℃

Collector cut-off current

2N6477 VCE=80V;IB=0

2N6478 VCE=100V;IB=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=1.0A ; VCE=4V

hFE-2

DC current gain

IC=2.5A ; VCE=4V

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

fT

Transition frequency

IC=0.5A ; VCE=4V

Product Specification

2N6477 2N6478

MIN TYP. MAX UNIT

120

V

140

1.0

V

2.0

V

1.8

V

3.0

V

2.0

10

mA

2.0

10

2.0 mA

2.0 mA

25

150

5

250 pF

0.2

MHz

2

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