2N4923 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2N4923 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N4921 2N4922 2N4923
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N4921
2N4922 IC=0.1A; IB=0
2N4923
VCEsat Collector-emitter saturation voltage IC=1.0A ;IB=0.1A
VBEsat Base-emitter saturation voltage
IC=1.0A ;IB=0.1A
VBE
Base-emitter on voltage
IC=1A ; VCE=1V
2N4921 VCE=20V; IB=0
ICEO
Collector cut-off current 2N4922 VCE=30V; IB=0
2N4923 VCE=40V; IB=0
ICBO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCB= Rated VCBO ;IE=0
VCE= Rated VCEO; VBE(off)=1.5V
TC=125℃
VEB=5V; IC=0
hFE-1
DC current gain
IC=50mA ; VCE=1V
hFE-2
DC current gain
IC=500mA ; VCE=1V
hFE-3
DC current gain
IC=1A ; VCE=1V
fT
Transition frequency
IC=250mA ; VCE=10V;f=1MHz
COB
Output capacitance
f=100kHz ; VCB=10V;IE=0
MIN TYP. MAX UNIT
40
60
V
80
0.6
V
1.3
V
1.3
V
0.5 mA
0.1 mA
0.1
0.5
mA
1.0 mA
40
30
150
10
3.0
MHz
100 pF
2
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