18N50L-TF2-R Ver la hoja de datos (PDF) - Unisonic Technologies
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18N50L-TF2-R Datasheet PDF : 6 Pages
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18N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
500
V
Gate to Source Voltage
VGSS
±30
V
Drain Current
Continuous
ID
Pulsed (Note 2)
IDM
18
A
72 (Note 5)
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
Repetitive (Note 2)
EAR
945
mJ
23.5
mJ
Avalanche Current (Note 2)
IAR
18
A
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F1
38.5
Power Dissipation TO-220F2
PD
40.5
W
TO-263
23.5
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=5.2mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤18A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
5. Drain current limited by maximum junction temperature
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220F1
Junction to Case
TO-220F2
TO-263
SYMBOL
θJA
θJc
RATINGS
62.5
3.3
3.0
0.53
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-477.G
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