11DQ10 Ver la hoja de datos (PDF) - Vishay Semiconductors
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11DQ10 Datasheet PDF : 5 Pages
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11DQ09, 11DQ10
Schottky Rectifier, 1.1 A Vishay High Power Products
10
100
TJ = 25˚C
TJ = 150˚C
TJ = 125˚C
1
TJ = 25˚C
10
0
20 40 60 80 100
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
150
120
DC
90
0.1
0
0.4
0.8
1.2
1.6
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
60
Square wave (D = 0.50)
80% Rated VR applied
30
see note (1)
0
0 0.3 0.6 0.9 1.2 1.5
Average Forward Current - IF(AV) (A)
Fig. 4 - Maximum Ambient Temperature vs.
Average Forward Current
10
1 TJ = 150˚C
0.1
125˚C
0.01
0.001
0.0001
25˚C
0.8
D = 0.20
D = 0.25
D = 0.33
D = 0.50
0.6 D = 0.75
RMS Limit
DC
0.4
0.2
0
0
20 40 60 80 100
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
0
0 0.3 0.6 0.9 1.2 1.5
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Document Number: 93207
Revision: 06-Nov-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
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