2SB738 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

fabricante

2SB738

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

Maximum Collector Dissipation Curve

1.2

0.8

0.4

0

50

100

150

Ambient Temperature Ta (°C)

Typical Output Characteristics (2)

–2.0

–25 –20

–15

–1.6

–10

–1.2

–5 mA

–0.8

PC = 0.9W

–0.4

0

–0.4 –0.8 –1.2 –1.6 –2.0

Collector to Emitter Voltage VCE (V)

2SB738, 2SB739

–100

–80

–60

Typical Output Characteristics (1)

–0.35

–0.3 –0.25

–0.2

–0.15

–40

–0.1

–20

–0.05 mA

IB = 0

0

–2 –4 –6 –8 –10

Collector to Emitter Voltage VCE (V)

–1,000

Typical Transfer Characteristics

–300

VCE = –2 V

Pulse

–100

Ta = 75°C

–30

25

–25

–10

–3

–1

0 –0.2 –0.4 –0.6 –0.8 –1.0

Base to Emitter Voltage VBE (V)

3

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