2SB738 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
fabricante
2SB738 Datasheet PDF : 6 Pages
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2SB738, 2SB739
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SB738
2SB739
Unit
–20
–20
V
–16
–20
V
–6
–6
V
–2
–2
A
0.9
0.9
W
150
150
°C
–55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SB738
2SB739
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO –20 — — –20 — — V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO –16 — — –20 — — V
IC = –1 mA, RBE = ∞
Emitter to base breakdown V(BR)EBO –6 — — –6 — — V
voltage
IE = –10 µA, IC = 0
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter
saturation voltage
I CBO
I EBO
hFE*1
VCE(sat)
——
——
100 —
——
–2 — —
–0.2 — —
320 100 —
–0.3 — —
–2 µA
–0.2 µA
320
–0.3 V
VCB = –16 V, IE = 0
VEB = –6 V, IC = 0
VCE = –2 V, IC = –0.1 A
IC = –1 A, IB = –0.1 A
Gain bandwidth product fT
Collector output capacitance Cob
— 150 — — 150 — MHz VCE = –2 V, IC = –10 mA
— 50 — — 50 — pF VCB = –10 V, IE = 0,
f = 1 MHz
Note: 1. The 2SB738 and 2SB739 are grouped by hFE as follows.
B
C
100 to 200 160 to 320
2
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