STP3HNK90Z Ver la hoja de datos (PDF) - STMicroelectronics

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fabricante

STP3HNK90Z

N-channel 900V - 0.35Ω - 3A - TO-220 - TO-220FP Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STP3HNK90Z - STF3HNK90Z

2

Electrical characteristics

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,

Tc = 125°C

IGSS

VGS(th)

RDS(on)

Gate body leakage current

(VGS = 0)

VGS = ± 30V

Gate threshold voltage

VDS = VGS, ID = 50µA

Static drain-source on

resistance

VGS = 10V, ID = 1.5 A

Min. Typ. Max. Unit

900

V

1

µA

50 µA

±10 µA

3

3.75 4.5

V

3.5 4.2 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS =15V, ID = 1.5A

19

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

690

71

14.4

pF

pF

pF

Cosseq(2).

Equivalent output

capacitance

VGS=0, VDS =0V to 720V

88

pF

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Off-voltage rise time

Fall time

VDD=450 V, ID= 1.5 A,

RG=4.7Ω, VGS=10V

(see Figure 18)

23

ns

28

ns

42

ns

27

ns

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=720V, ID = 3A

VGS =10V

26 35 nC

5.7

nC

13.9

nC

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

5/15

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