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PN2222A

NPN switching transistor

Philips Electronics 

Philips Semiconductors

NPN switching transistor

Product specification

PN2222A

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Transistor mounted on an FR4 printed-circuit board.

VALUE

250

UNIT

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

ICBO

IEBO

hFE

VCEsat

VBEsat

Cc

Ce

fT

F

collector cut-off current

emitter cut-off current

DC current gain

collector-emitter saturation voltage

base-emitter saturation voltage

collector capacitance

emitter capacitance

transition frequency

noise figure

IE = 0; VCB = 60 V

IE = 0; VCB = 60 V; Tamb = 125 °C

IC = 0; VEB = 3 V

IC = 0.1 mA; VCE = 10 V

IC = 1 mA; VCE = 10 V

IC = 10 mA; VCE = 10 V

IC = 10 mA; VCE = 10 V; Tamb = −55 °C

IC = 150 mA; VCE = 1 V

IC = 150 mA; VCE = 10 V

IC = 500 mA; VCE = 10 V

IC = 150 mA; IB = 15 mA

IC = 500 mA; IB = 50 mA

IC = 150 mA; IB = 15 mA

IC = 500 mA; IB = 50 mA

IE = ie = 0; VCB = 10 V; f = 1 MHz

IC = ic = 0; VEB = 500 mV; f = 1 MHz

IC = 20 mA; VCE = 20 V; f = 100 MHz

IC = 100 µA; VCE = 5 V; RS = 1 kΩ;

f = 1 kHz

Switching times (between 10% and 90% levels); see Fig.2

ton

turn-on time

td

delay time

tr

rise time

toff

turn-off time

ts

storage time

tf

fall time

ICon = 150 mA; IBon = 15 mA;

IBoff = −15 mA; Tamb = 25 °C

MIN. MAX. UNIT

−

10 nA

−

10 µA

−

10 nA

35 −

50 −

75 −

35 −

50 −

100 300

40 −

−

300 mV

1

−

V

0.6 1.2 V

−

2

V

−

8

pF

−

25 pF

300 −

MHz

−

4

dB

−

35 ns

−

15 ns

−

20 ns

−

250 ns

−

200 ns

−

60 ns

1999 May 21

3

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