BAT74V,115 Ver la hoja de datos (PDF) - NXP Semiconductors.

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fabricante

BAT74V,115

Schottky barrier double diode

NXP Semiconductors. 

NXP Semiconductors

Schottky barrier double diode

Product data sheet

BAT74V

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

continuous forward voltage

IR

reverse current

Cd

diode capacitance

Note

1. Pulse test: tp = 300 μs; δ = 0.02.

CONDITIONS

IF = 0.1 mA

IF = 1 mA

IF = 1 0 mA

IF = 30 mA

IF = 1 00 mA; note 1; see Fig.2

VR = 25 V; note 1; see Fig.3

VR = 1 V; f = 1 MHz; see Fig.4

MAX.

240

320

400

500

800

2

10

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

Note

1. Refer to SOT666 standard mounting conditions.

CONDITIONS

note 1

Soldering

The only recommended soldering method is reflow soldering.

VALUE

416

UNIT

mV

mV

mV

mV

mV

μA

pF

UNIT

K/W

2002 Sep 02

3

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